REASUNOS RS60R190BF

REASUNOS · FETs & Power MOSFETs · MPN RS60R190BF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)36nC@10V
Output Capacitance(Coss)101pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.1V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)2.3pF
RDS(on)160mΩ@10V
Input Capacitance(Ciss)1.49nF

Technical details

600V 20A 4.1V 34W 160mΩ@10V TO-220F Single FETs, MOSFETs RoHS

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