REASUNOS RS60R130W

REASUNOS · FETs & Power MOSFETs · MPN RS60R130W

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)129pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation162W
RDS(on)110mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.9pF
Number1 N-channel
Input Capacitance(Ciss)1.908nF

Technical details

600V 30A 4V 162W 110mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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