REASUNOS RS60R130F

REASUNOS · FETs & Power MOSFETs · MPN RS60R130F

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.95nF

Technical details

N-Channel 650V 30A 34W Through Hole TO-220F

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