REASUNOS RS60R070W

REASUNOS · FETs & Power MOSFETs · MPN RS60R070W

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Specifications

Gate Charge(Qg)190nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation303W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

N-Channel 600V 47A 303W Through Hole TO-247

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