REASUNOS RS60N80UHT

REASUNOS · FETs & Power MOSFETs · MPN RS60N80UHT

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)29nC@10V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)924pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.504nF

Technical details

60V 80A 3.6V 167W 4.9mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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