REASUNOS RS60N80UHG

REASUNOS · FETs & Power MOSFETs · MPN RS60N80UHG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)580pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.563nF

Technical details

60V 80A 3.6V 78W 4.2mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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