REASUNOS RS60N50T

REASUNOS · FETs & Power MOSFETs · MPN RS60N50T

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.03nF

Technical details

60V 50A 2.5V 75W 15mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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