REASUNOS RS60N50D

REASUNOS · FETs & Power MOSFETs · MPN RS60N50D

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Specifications

Gate Charge(Qg)50nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.05nF

Technical details

N-Channel 60V 50A 89W Surface Mount TO-252

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