REASUNOS RS60N30D

REASUNOS · FETs & Power MOSFETs · MPN RS60N30D

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Specifications

Gate Charge(Qg)47nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

N-Channel 60V 30A 45W Surface Mount TO-252

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