REASUNOS · FETs & Power MOSFETs · MPN RS60N160UHG
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Output Capacitance(Coss) | 1.089nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 184W |
| RDS(on) | 2.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.501nF |
60V 160A 3.4V 184W 2.1mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS