REASUNOS RS60N160UHG

REASUNOS · FETs & Power MOSFETs · MPN RS60N160UHG

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)1.089nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation184W
RDS(on)2.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)14pF
Number1 N-channel
Input Capacitance(Ciss)3.501nF

Technical details

60V 160A 3.4V 184W 2.1mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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