REASUNOS RS60N120T

REASUNOS · FETs & Power MOSFETs · MPN RS60N120T

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)102nC@10V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)390pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation155W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.67nF
TypeN-Channel

Technical details

60V 120A 4V 155W 4.6mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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