REASUNOS · FETs & Power MOSFETs · MPN RS60N120D
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 390pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 155W |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.67nF |
60V 120A 4V 155W 4.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS