REASUNOS RS5N65D

REASUNOS · FETs & Power MOSFETs · MPN RS5N65D

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Specifications

Gate Charge(Qg)20nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)665pF

Technical details

N-Channel 650V 5A 90W Surface Mount TO-252

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