REASUNOS RS5N50D

REASUNOS · FETs & Power MOSFETs · MPN RS5N50D

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation52W
RDS(on)1.45Ω@10V
Reverse Transfer Capacitance (Crss@Vds)6.7pF
Number1 N-channel
Input Capacitance(Ciss)478pF

Technical details

500V 5A 52W Surface Mount TO-252

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