REASUNOS RS55R190F

REASUNOS · FETs & Power MOSFETs · MPN RS55R190F

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Specifications

Drain to Source Voltage550V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)203pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation98W
Reverse Transfer Capacitance (Crss@Vds)6.2pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.036nF

Technical details

550V 20A 4V 98W 170mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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