REASUNOS RS55R140F

REASUNOS · FETs & Power MOSFETs · MPN RS55R140F

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Specifications

Drain to Source Voltage550V
Gate Charge(Qg)33nC@10V
Current - Continuous Drain(Id)23A
Output Capacitance(Coss)196pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)118mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.398nF

Technical details

550V 23A 4V 107W 118mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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