REASUNOS RS55R090F

REASUNOS · FETs & Power MOSFETs · MPN RS55R090F

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Specifications

Drain to Source Voltage550V
Gate Charge(Qg)51nC@10V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)82pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation126.3W
Reverse Transfer Capacitance (Crss@Vds)700fF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.11nF
TypeN-Channel

Technical details

550V 40A 5V 126.3W 80mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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