REASUNOS RS50R190F

REASUNOS · FETs & Power MOSFETs · MPN RS50R190F

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)202pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96.9W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.033nF

Technical details

500V 20A 4V 96.9W 165mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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