REASUNOS RS50R090F

REASUNOS · FETs & Power MOSFETs · MPN RS50R090F

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Specifications

Output Capacitance(Coss)82pF
Pd - Power Dissipation35W
Configuration-
Gate Charge(Qg)51nC
Drain to Source Voltage500V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)700fF
RDS(on)78mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.11nF

Technical details

35W 500V 2V 78mΩ@10V 1 N-channel N-Channel T0-220F Single FETs, MOSFETs RoHS

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