REASUNOS RS4N90D

REASUNOS · FETs & Power MOSFETs · MPN RS4N90D

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation70W
RDS(on)3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)674pF

Technical details

N-Channel 900V 4A 70W Surface Mount TO-252

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