REASUNOS · FETs & Power MOSFETs · MPN RS4N80D
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 24.5nC@10V |
| Output Capacitance(Coss) | 62pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| RDS(on) | 3.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 527pF |
800V 4A 4V 170W 3.2Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS