REASUNOS RS45N50W

REASUNOS · FETs & Power MOSFETs · MPN RS45N50W

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Specifications

Gate Charge(Qg)130nC@0V
Drain to Source Voltage500V
Output Capacitance(Coss)740pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation260W
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)7nF

Technical details

500V 45A 260W Through Hole TO-247-3

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