REASUNOS RS40N80D

REASUNOS · FETs & Power MOSFETs · MPN RS40N80D

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Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)222pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.76nF

Technical details

40V 80A 2.5V 125W 4.2mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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