REASUNOS RS40N70D

REASUNOS · FETs & Power MOSFETs · MPN RS40N70D

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)212pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)178pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.01nF

Technical details

40V 70A 2.3V 60W 4.5mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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