REASUNOS RS40N60D

REASUNOS · FETs & Power MOSFETs · MPN RS40N60D

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)48nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)165pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation55W
RDS(on)5.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)135pF
Number1 N-channel
Input Capacitance(Ciss)2.44nF

Technical details

40V 60A 2.5V 55W 5.4mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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