REASUNOS · FETs & Power MOSFETs · MPN RS40N200T
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| Gate Charge(Qg) | 146nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Output Capacitance(Coss) | 1.1nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 2.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 670pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.56nF |
40V 200A 2.5V 200W 2.3mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS