REASUNOS RS40N200S

REASUNOS · FETs & Power MOSFETs · MPN RS40N200S

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Specifications

Gate Charge(Qg)146nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
RDS(on)2.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)9.56nF

Technical details

N-Channel 40V 200A 200W Surface Mount TO-263

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