REASUNOS RS40N150T

REASUNOS · FETs & Power MOSFETs · MPN RS40N150T

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
RDS(on)5.6mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)318pF
Number1 N-channel
Input Capacitance(Ciss)4.89nF

Technical details

N-Channel 40V 150A 180W Through Hole TO-220

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