REASUNOS RS40N150D

REASUNOS · FETs & Power MOSFETs · MPN RS40N150D

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation187W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.335nF

Technical details

40V 150A 4V 187W 3.1mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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