REASUNOS RS40N120T

REASUNOS · FETs & Power MOSFETs · MPN RS40N120T

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Specifications

Gate Charge(Qg)102nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation110W
RDS(on)2.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)360pF
Number1 N-channel
Input Capacitance(Ciss)4.645nF

Technical details

N-Channel 40V 120A 110W Through Hole TO-220

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