REASUNOS RS40N100HG

REASUNOS · FETs & Power MOSFETs · MPN RS40N100HG

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Specifications

Gate Charge(Qg)80nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation61W
RDS(on)4.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)315pF
Number1 N-channel
Input Capacitance(Ciss)4.885nF

Technical details

N-Channel 40V 100A 61W Surface Mount DFN-8(5x6)

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