REASUNOS RS3N50C

REASUNOS · FETs & Power MOSFETs · MPN RS3N50C

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.56W
RDS(on)3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)267pF

Technical details

500V 3A 5.56W Surface Mount SOT-223

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