REASUNOS RS3N150PF

REASUNOS · FETs & Power MOSFETs · MPN RS3N150PF

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Specifications

Gate Charge(Qg)54.5nC@10V
Drain to Source Voltage1.6kV
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation69W
RDS(on)5.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)1.348nF

Technical details

1.6kV 3A 69W Through Hole TO-3PF

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