REASUNOS RS3N150F

REASUNOS · FETs & Power MOSFETs · MPN RS3N150F

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Specifications

Drain to Source Voltage1.5kV
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)100pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)5.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

1.5kV 3A 4.5V 35W 5.4Ω@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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