REASUNOS RS30P65D

REASUNOS · FETs & Power MOSFETs · MPN RS30P65D

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)16mΩ@5V
Number1 P-Channel
Input Capacitance(Ciss)3.57nF

Technical details

P-Channel 30V 65A 83W Surface Mount TO-252

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