REASUNOS RS30N86D

REASUNOS · FETs & Power MOSFETs · MPN RS30N86D

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)86A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.33nF

Technical details

N-Channel 30V 86A 83W Surface Mount TO-252

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