REASUNOS RS30N80K

REASUNOS · FETs & Power MOSFETs · MPN RS30N80K

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)34nC@10V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)220pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation29W
RDS(on)4.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)178pF
Number1 N-channel
Input Capacitance(Ciss)178pF

Technical details

30V 80A 2.5V 29W 4.6mΩ@10V 1 N-channel PDFN-8(3x3) Single FETs, MOSFETs RoHS

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