REASUNOS RS30N50W

REASUNOS · FETs & Power MOSFETs · MPN RS30N50W

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Specifications

Gate Charge(Qg)150nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.85nF

Technical details

N-Channel 500V 30A 320W Through Hole TO-247

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