REASUNOS RS30N50D

REASUNOS · FETs & Power MOSFETs · MPN RS30N50D

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)161pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.174nF

Technical details

30V 50A 2.5V 48W 6.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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