REASUNOS RS30N30K

REASUNOS · FETs & Power MOSFETs · MPN RS30N30K

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23.6nC@15V
Output Capacitance(Coss)201pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation17W
Reverse Transfer Capacitance (Crss@Vds)164pF
RDS(on)5.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.015nF

Technical details

30V 30A 1V 17W 5.8mΩ@10V 1 N-channel PDFN-8(3x3) Single FETs, MOSFETs RoHS

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