REASUNOS RS30N190D

REASUNOS · FETs & Power MOSFETs · MPN RS30N190D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)93nC@10V
Output Capacitance(Coss)940pF
Current - Continuous Drain(Id)190A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation178W
RDS(on)2.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)604pF
Number1 N-channel
Input Capacitance(Ciss)6.847nF

Technical details

30V 190A 2.5V 178W 2.2mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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