REASUNOS RS30N180S

REASUNOS · FETs & Power MOSFETs · MPN RS30N180S

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)180A
Output Capacitance(Coss)570pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)470pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.06nF

Technical details

30V 180A 2.5V 88W 2mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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