REASUNOS RS30N180D

REASUNOS · FETs & Power MOSFETs · MPN RS30N180D

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation80W
RDS(on)4.3mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)470pF
Number1 N-channel
Input Capacitance(Ciss)5.06nF

Technical details

30V 180A 80W Surface Mount TO-252

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