REASUNOS RS30N150T

REASUNOS · FETs & Power MOSFETs · MPN RS30N150T

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)67nC@10V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation120W
RDS(on)2.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)360pF
Number1 N-channel
Input Capacitance(Ciss)3.64nF

Technical details

30V 150A 2.5V 120W 2.6mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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