REASUNOS RS30N150D

REASUNOS · FETs & Power MOSFETs · MPN RS30N150D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)67nC@10V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
RDS(on)3.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)360pF
Number1 N-channel
Input Capacitance(Ciss)3.64nF
TypeN-Channel

Technical details

N-Channel 30V 150A 75W Surface Mount TO-252

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