REASUNOS RS30N115G

REASUNOS · FETs & Power MOSFETs · MPN RS30N115G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)58nC@15V
Current - Continuous Drain(Id)115A
Output Capacitance(Coss)375pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)303pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.09nF

Technical details

30V 115A 2.5V 104W 2.6mΩ@10V 1 N-channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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