REASUNOS RS30N100G

REASUNOS · FETs & Power MOSFETs · MPN RS30N100G

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)326pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)282pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF

Technical details

30V 100A 2V 35W 3.3mΩ@10V 1 N-channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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