REASUNOS RS30N100D

REASUNOS · FETs & Power MOSFETs · MPN RS30N100D

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Specifications

Gate Charge(Qg)58nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)7mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)2.6nF

Technical details

N-Channel 30V 100A 88W Surface Mount TO-252

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