REASUNOS RS2N65F

REASUNOS · FETs & Power MOSFETs · MPN RS2N65F

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)31pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation33W
RDS(on)4.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)290pF

Technical details

650V 2A 33W Through Hole TO-220F

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