REASUNOS RS2N60C

REASUNOS · FETs & Power MOSFETs · MPN RS2N60C

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage600V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation28W
RDS(on)4.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number1 N-channel
Input Capacitance(Ciss)248.5pF

Technical details

N-Channel 600V 2A 28W Surface Mount SOT-223

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